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为创新工程师提供智能存储器产品
让您的新型电子或电脑产品快速的进入市场在当今高速竞争的世界里是绝对必要的。精明的产品工程师了解Ramtron先进非易失性存储器产品提供出众的高速数据存储,具有几乎无限制的写入耐性和低功耗特点。无论您的应用需要是打印盒存储区、RAID技术或者最新手持PDA上的高级MCU,Ramtron都会提供卓越的F-RAM存储器产品。
 
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F-RAM ideal for virtual-block-to-sector maps in SSDs

Solid state disks (SSD) are data storage devices that use nonvolatile memory (Flash) and volatile memory (SDRAM) to store data.  SSDs are gaining popularity and replacing hard disk drive (HDD) in ultra mobile PCs (UMPCs) and notebook PCs because SSDs have no moving parts, making them rugged, immune to vibration, and have no altitude operating restrictions.

SSD controllers treat Flash memory as a block device that allows fixed-size data blocks to be read and written, much like disk sectors. This allows standard file systems designed for magnetic disks, such as FAT (File Associate Table), to utilize Flash devices.

Flash: longevity issues
Mapping the blocks of data onto Flash addresses in a simple linear fashion presents two problems. First, when the file system in mapped onto a Flash device, frequently used erase units wear out quickly, slowing down access times, and eventually burning out. This problem can be addressed by using a more sophisticated block-to-Flash mapping scheme and by moving around blocks, referred to as wear-leveling.

The second problem is writing data blocks smaller than a Flash erase unit. Suppose that the data blocks that the file system uses are 4 KB each, and that Flash erase units are 128 KB each. If 4 KB blocks are mapped to Flash addresses using the identity mapping, writing a 4 KB block requires copying a 128 KB Flash erase unit (block) to RAM, overwriting the appropriate 4 KB region, erasing the Flash erase unit, and rewriting it from RAM. Furthermore, if power is lost before the entire Flash erase unit is rewritten to the device, 128 KB of data are lost. Wear-leveling can also address this issue, but adds complexity and cost to the design process.

F-RAM ideal for virtual-block-to-sector maps in SSDs
F-RAM enabled solid-state disks overcome the endurance problems that have challenged the SSD industry while eliminating backup batteries, improving system power consumption, increasing reliability, and shrinking the form factor.

F-RAM: high endurance, no leveling needed
In SSDs, the endurance and wear-leveling required in Flash virtual-block-to-sector map (hot data) can be eliminated altogether by storing the virtual-block-to-sector map in a F-RAM device.

F-RAM has virtually unlimited endurance (1E+14) and is writable at byte granularity and there are no block-erasure constraints like NAND Flash.

Contact an F-RAM applications engineer to find out how F-RAM can improve your next solid state disk design.

Email us at framinfo@ramtron.com or call 719-481-7000.

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